The 78th JSAP Autumn Meeting, 2017

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6p-C21-1~20] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Sep 6, 2017 1:45 PM - 7:00 PM C21 (C21)

Kuniyuki Kakushima(Titech), Masato Sone(Titech)

1:45 PM - 2:00 PM

[6p-C21-1] Reaction Rate Analysis of Silicon Epitaxial Growth in SiHCl3-SiHx-H2 System

〇Kenta Irikura1, Watanabe Toru1 (1.Yokohama Nat. Univ.)

Keywords:epitaxial growth, trichlorosilane, growth mechanism

The rate constant for the reaction of SiCl2 and SiHx was evaluated using the numerical calculation. The mechanism for increasing the growth rate will be discussed in detail.