The 78th JSAP Autumn Meeting, 2017

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6p-C21-1~20] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Sep 6, 2017 1:45 PM - 7:00 PM C21 (C21)

Kuniyuki Kakushima(Titech), Masato Sone(Titech)

2:00 PM - 2:15 PM

[6p-C21-2] Method for Increasing the Growth Rate of Silicon Film in SiH2Cl2-SiHx-H2 System

〇AYAMI YAMADA1, Hitoshi Habuka1 (1.Yokohama Nat. Univ.)

Keywords:epitaxial growth, dichlorosilane, growth mechanism

The growth rate increase in the SiH2Cl2-SiHx-H2 system was evaluated. The growth rate was increased with the increasing SiHx gas flow rate. Its detail will be discussed.