1:45 PM - 2:00 PM
[6p-C21-1] Reaction Rate Analysis of Silicon Epitaxial Growth in SiHCl3-SiHx-H2 System
Keywords:epitaxial growth, trichlorosilane, growth mechanism
The rate constant for the reaction of SiCl2 and SiHx was evaluated using the numerical calculation. The mechanism for increasing the growth rate will be discussed in detail.