[6p-C21-1~20] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6p-C21-9] Improvement of wafer's in-plane uniformity of electrical characteristics in CMOS process by minimal fab

〇Kazuhiro Koga^1,2, Fumito Imura^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

Keywords:minimalfab, thermal diffusion, boron dopant

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