[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-25] Stabilization of threshold voltage of GaN MISFET by nitrogen radical irradiation

〇Hideki Matsumura¹, Romualdo Ferreyra¹, Asamira Suzuki¹, Daisuke Ueda¹ (1.Kyoto Inst. Tech.)

Keywords:GaN