[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-31] Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Channel HEMTs

〇Akira Endoh¹, Issei Watanabe¹, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (1.NICT, 2.Fujitsu Labs. Ltd.)

Keywords:HEMT, InGaAs/InAs/InGaAs channel, Cryogenic characteristics