[7a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[7a-A201-3] Surface morphology of 4H - SiC wafer after etching using ClF₃ gas

〇shogo okuyama¹, Hitoshi Habuka¹, Yoshinao Takahasi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo, 3.AIST)

Keywords:Silicon carbide, Chlorine trifluoride, Etching

The polished C-face 4H-SiC wafer was etched using chlorine trifluoride gas for evaluating the capability of SiC wafer etcher. The surface roughness will be discussed.