[7a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[7a-A201-4] Gas distributor design of SiC wafer etching reactor using ClF₃ gas

〇Keisuke Kurashima¹, Shogo Okuyama¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo, 3.AIST)

Keywords:silicon carbide, chlorine trifuloride, etching

In order to improve the uniformity of the 4H-SiC wafer etching rate, the gas distributor design was evaluated. The numerical calculation for the design concept will be discussed.