[7a-A402-1~10] 8.4 Plasma etching

[7a-A402-6] The Etching Characteristics and Dissociation Behavior of High Selective Si₃N₄ Etching Gas C₄H₉F

〇Azumi Ito¹, Hirotoshi Inui¹, Hirokazu Matsumoto¹ (1.Zeon Corporation)

Keywords:etching gas

The results regarding newly developed etching gas, C₄H₉F will be reported. This gas is developed as high selective Si₃N₄ etching gas. The presentation includes the results of etching performance compared with CH₃F and CH₂F₂, and also the results of plasma analysis with QMAS to observe the behavior of ions and radicals.