Oral presentation

[7a-A402-1~10] 8.4 Plasma etching

Thu. Sep 7, 2017 9:00 AM - 11:45 AM A402 (402+403)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+Add all to schedule

9:00 AM - 9:15 AM

[7a-A402-1] Effect of an additive gas on copper dry etching by hydrogen plasma

〇Hiromasa Ohmi¹, Jumpei Sato¹, Yusuke Kubota², Tatsuya Hirano¹, Hiroaki Kakiuxhi¹, Kiyoshi Yasutake¹ (1.Osaka Univ., 2.Tokyo Electron LTD.)

9:15 AM - 9:30 AM

△ [7a-A402-2] XPS Analyses for Adsorption Reactions of Hexafluoroacetylacetone (hfac) with Ni Surfaces

〇Tomoko Ito¹, Karahashi Kazuhiro¹, Hamaguchi Satoshi¹ (1.Osaka Univ.)

9:30 AM - 9:45 AM

△ [7a-A402-3] Analysis of Etching Mechanisms on of ZnO pretreated by He⁺ Ion Irradiation

〇HU LI¹, Tomoko Ito¹, Kazuhiro Karahashi¹, Masanaga Fukasawa², Akiko Hirata², Nagahata Kazunori², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Sony)

9:45 AM - 10:00 AM

[7a-A402-4] Etching reactions of fluorinated layers on metal surfaces exposed to XeF₂

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

10:00 AM - 10:30 AM

[7a-A402-5] [JSAP Best Review Paper Award Speech] Physics of electron cyclotron resonance ion sources

〇Hitoshi Kuninaka¹ (1.JAXA)

10:30 AM - 10:45 AM

[7a-A402-6] The Etching Characteristics and Dissociation Behavior of High Selective Si₃N₄ Etching Gas C₄H₉F

〇Azumi Ito¹, Hirotoshi Inui¹, Hirokazu Matsumoto¹ (1.Zeon Corporation)

10:45 AM - 11:00 AM

△ [7a-A402-7] Active species of hydrofluorocarbon plasma and etch performances of dielectric films - 2

〇Naoki Takeda¹, Yan Zhang¹, Toshio Hayashi¹, Makoto Sekine¹, Hiroki Kondo¹, Kenji ishikawa¹, Masaru Hori² (1.Nagoya Univ. Eng., 2.Nagoya Univ. Inst. Innovation for Future Society)

11:00 AM - 11:15 AM

△ [7a-A402-8] Effect of Bias Voltage for Removal of DLC Films by Using Oxygen Plasma

〇Yuki Kondo¹, Itaru Fujita¹, Satoshi Degai¹, Tsuyoshi Tanimoto¹, Toru Harigai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Hidenobu Gonda², Yasuhiro Hadano³, Masao Kamiya⁴ (1.Toyohashi Univ. Technol, 2.OSG Corp., 3.Kojima Ind. Corp., 4.Itoh Opt. Ind. co., Ltd.)

11:15 AM - 11:30 AM

[7a-A402-9] Synthesis process of nano-crystals on Si substrates in etching of CF₄/Ar plasmas

〇(M2)Gento Kuroda¹, Kazuo Takahashi¹, Koji Nishio¹ (1.Kyoto Inst. of Tech)

11:30 AM - 11:45 AM

[7a-A402-10] Chemically chlorine radical-etch of GaN at elevated temperatures

〇Kenji Ishikawa¹, Zecheng Liu¹, Masato Imamura¹, Takayoshi Tsutsumi¹, Hiroki Kondo¹, Osamu Oda¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya University)

Oral presentation

[7p-A402-1~6] 8.4 Plasma etching

Thu. Sep 7, 2017 1:15 PM - 2:45 PM A402 (402+403)

Tetsuya Tatsumi(Sony)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+Add all to schedule

1:15 PM - 1:30 PM

△ [7p-A402-1] Surface composition analysis of SiN/SiO₂ deep holes fabricated by plasma etching

〇Taku Iwase¹, Kazuhiro Karahashi², Satoshi Hamaguchi² (1.Hitachi R&D, 2.Osaka Univ.)

1:30 PM - 1:45 PM

[7p-A402-2] Control of ITO etch rate by using Hydrogen-induced Modified Layer

Akiko Hirata¹, 〇Masanaga Fukasawa¹, Kazunori Nagahata¹, Hu Li², Tomoko Ito², Kazuhiro Karahashi², Satoshi Hamaguchi², Tetsuya Tatsumi¹ (1.Sony Semiconductor Solutions Corp., 2.Osaka Univ.)

1:45 PM - 2:00 PM

[7p-A402-3] Etching characteristics of TPCO using O₂/Ar plasma

〇Shuya Murakami¹, Shusuke Yamashita¹, Shinya Yoneda¹, Kazuo Takahashi¹, Takeshi Yamao¹ (1.Kyoto Institute of Technology)

2:00 PM - 2:15 PM

[7p-A402-4] Molecular dynamics simulation of SiO₂ atomic layer etching by fluorocarbon plasmas and Ar plasmas

〇(M2)Yuki Okada¹, Michiro Isobe¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

2:15 PM - 2:30 PM

[7p-A402-5] Study of residual gas suppression for etching rate stabilization in the dry etching

〇Yukihiro Tsuji¹, Tetsuya Hattori¹, Masaki Yanagisawa¹, Hajime Shoji¹ (1.Sumitomo Electric Industries, Ltd.)

2:30 PM - 2:45 PM

△ [7p-A402-6] Improvement of Etching Process Distribution Controllability within a Wafer by Multi Gas Injection System

〇Isao Mori¹, Motohiro Tanaka¹, Tetsuo Kawanabe², Soichiro Eto², Naoki Yasui¹ (1.Hitachi High-Technologies Corp., 2.Hitachi, Ltd.)

Sessions

8 Plasma Electronics » 8.4 Plasma etching

[7a-A402-1~10] 8.4 Plasma etching

[7a-A402-1] Effect of an additive gas on copper dry etching by hydrogen plasma

△ [7a-A402-2] XPS Analyses for Adsorption Reactions of Hexafluoroacetylacetone (hfac) with Ni Surfaces

△ [7a-A402-3] Analysis of Etching Mechanisms on of ZnO pretreated by He⁺ Ion Irradiation

[7a-A402-4] Etching reactions of fluorinated layers on metal surfaces exposed to XeF₂

[7a-A402-5] [JSAP Best Review Paper Award Speech] Physics of electron cyclotron resonance ion sources

[7a-A402-6] The Etching Characteristics and Dissociation Behavior of High Selective Si₃N₄ Etching Gas C₄H₉F

△ [7a-A402-7] Active species of hydrofluorocarbon plasma and etch performances of dielectric films - 2

△ [7a-A402-8] Effect of Bias Voltage for Removal of DLC Films by Using Oxygen Plasma

[7a-A402-9] Synthesis process of nano-crystals on Si substrates in etching of CF₄/Ar plasmas

[7a-A402-10] Chemically chlorine radical-etch of GaN at elevated temperatures

[7p-A402-1~6] 8.4 Plasma etching

△ [7p-A402-1] Surface composition analysis of SiN/SiO₂ deep holes fabricated by plasma etching

[7p-A402-2] Control of ITO etch rate by using Hydrogen-induced Modified Layer

[7p-A402-3] Etching characteristics of TPCO using O₂/Ar plasma

[7p-A402-4] Molecular dynamics simulation of SiO₂ atomic layer etching by fluorocarbon plasmas and Ar plasmas

[7p-A402-5] Study of residual gas suppression for etching rate stabilization in the dry etching

△ [7p-A402-6] Improvement of Etching Process Distribution Controllability within a Wafer by Multi Gas Injection System

Authentication

Sessions

8 Plasma Electronics » 8.4 Plasma etching

[7a-A402-1~10] 8.4 Plasma etching

△ [7a-A402-2] XPS Analyses for Adsorption Reactions of Hexafluoroacetylacetone (hfac) with Ni Surfaces

△ [7a-A402-3] Analysis of Etching Mechanisms on of ZnO pretreated by He+ Ion Irradiation

△ [7a-A402-7] Active species of hydrofluorocarbon plasma and etch performances of dielectric films - 2

△ [7a-A402-8] Effect of Bias Voltage for Removal of DLC Films by Using Oxygen Plasma

[7p-A402-1~6] 8.4 Plasma etching

△ [7p-A402-1] Surface composition analysis of SiN/SiO2 deep holes fabricated by plasma etching

△ [7p-A402-6] Improvement of Etching Process Distribution Controllability within a Wafer by Multi Gas Injection System

Authentication

△ [7a-A402-3] Analysis of Etching Mechanisms on of ZnO pretreated by He⁺ Ion Irradiation

△ [7p-A402-1] Surface composition analysis of SiN/SiO₂ deep holes fabricated by plasma etching