[7p-A402-1~6] 8.4 Plasma etching

[7p-A402-2] Control of ITO etch rate by using Hydrogen-induced Modified Layer

Akiko Hirata¹, 〇Masanaga Fukasawa¹, Kazunori Nagahata¹, Hu Li², Tomoko Ito², Kazuhiro Karahashi², Satoshi Hamaguchi², Tetsuya Tatsumi¹ (1.Sony Semiconductor Solutions Corp., 2.Osaka Univ.)

Keywords:Etching, Transparent electrode, Transparent Conductive Oxide