[7a-C17-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7a-C17-8] Characterization of ZnO/Si Junctions using Polarity-Controlled ZnO Thin Films

〇Takeo Ohsawa¹, Yoshihito Yamagata², Takamasa Ishigaki², Naoki Ohashi¹ (1.NIMS, 2.Hosei Univ.)

Keywords:zinc oxide, photoemission, polarity

Zinc oxide (ZnO) is a candidate material for transparent electrodes and light-emitting devices. Wurtzite-type ZnO has spontaneous polarization along the c-axis and the polarity control is of importance to chemical applications and electronic devices. We have focused on the polarity to determine the various properties of ZnO and established the polarity control of undoped ZnO films. In addition to the polarity control, we examined the electric properties, electronic, and defect states. We present polarity dependece of such properties.