The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7a-C17-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 7, 2017 9:00 AM - 12:15 PM C17 (Training Room 2)

Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

11:15 AM - 11:30 AM

[7a-C17-9] Correspondence between PL spectra and conductive properties of ZnO films

Housei Akazawa1 (1.NTT DIC)

Keywords:ZnO, photoluminescence, Intrinsic donor

While electric conduction of transparent conductive ZnO films originates from intrinsic donors related to defects, it has not been established which kind of donors actually contribute. On the other hand, photoluminescence from deep levels provides information about electronic transition between defects and conduction/valence bands. However, there are only few works studying correlation between electric conduction and photoluminescence. We attempted to present one-to-one correspondence between electric condution and photoluminescence properties.