[7a-C21-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[7a-C21-13] The dependence of regrowth rate of a thin amorphous Si layer formed on clean and H-terminated Si surfaces upon interfacial H amounts using medium energy IBIEC

〇Gosuke Yachida¹, Koudai Inoue¹, Yasushi Hoshino¹, Jyoji Nakata¹ (1.Kanagawa Univ.)

Keywords:ion beam induced epitaxial crystallization, H-terminated Si(001), Rutherford Backscattering Spectrometry