[7a-C21-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [7a-C21-7] Low temperature Si generation by the reduction of SiCl₄ with hydrogen radical

〇Yuji Okamoto^1,2, Daiki Tsutsumi³, Takamasa Ishigaki³, Fatima Zohra Dahmani⁴, Masatomo Sumiya¹ (1.NIMS, 2.Tsukuba Univ., 3.Hosei Univ., 4.USTO-MB)

Keywords:Hydrogen radical, SiCl4, High purity Si

High purity Si is generally produced by reducing SiHCl₃ with H₂ gas (Siemens method). However, the thermal decomposition of SiHCl₃ also takes place at the process temperature of 1200℃, which decreases a yield of the high purity Si to 25 % due to the synthesis of byproduct (SiCl₄). In this study, we have attempted to generate Si by reducing the SiCl₄ with the remotely supplied hydrogen radical.