[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

[7a-S22-10] Time-resolved photoluminescence characterization of Mg-doped GaN on GaN

〇Shigefusa Chichibu^1,2, Kazunobu Kojima¹, Kohei Shima¹, Shin-ya Takashima³, Masaharu Edo³, Katsunori Ueno³, Shoji Ishibashi⁴, Akira Uedono⁵ (1.IMRAM, Tohoku Univ., 2.IMaSS, Nagoya Univ., 3.Fuji Electric, 4.AIST, 5.Univ. of Tsukuba)

Keywords:GaN, Mg-doped p-type GaN, PL lifetime

Species of point defects responsible for the nonradiative recombination on Mg-doped GaN grown on a freestanding GaN substrate will be discussed.