Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

Thu. Sep 7, 2017 9:00 AM - 12:00 PM S22 (Palace B)

Taketomo Sato(Hokkaido Univ.)

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9:00 AM - 9:15 AM

[7a-S22-1] Nondestructive measurement of a homo-epitaxial grown GaN film thickness using FT-IR

〇FUMIMASA HORIKIRI¹, YOSHINOBU NARITA¹, TAKEHIRO YOSHIDA¹ (1.Sciocs Co. Ltd.)

9:15 AM - 9:30 AM

△ [7a-S22-2] Growth condition optimization of AlN buffer layer deposited by reactive sputtering for epitaxial growth of GaN on Si

〇(M1)Kouta Tatejima^1,2, Takahiro Nagata², Keiji Ishibashi³, Kenichirou Takahashi³, Setsu Suzuki³, Atsushi Ogura¹, Toyohiro Chikyow² (1.Meiji Univ., 2.NIMS, 3.COMET Inc.)

9:30 AM - 9:45 AM

[7a-S22-3] Fabrication of 4-6inch GaN free-standing substrates by VAS-method

〇Takayuki Suzuki¹, Toshio Kitamura¹, Taichiro Konno¹, Toshihisa Inoue¹, Satoshi Uematsu¹, Tetsuji Fujimoto¹, Takeshi Kimura¹, Yukio Abe¹, Hajime Fujikura¹, Takehiro Yoshida¹, Shinjiro Fujio¹ (1.SCIOCS)

9:45 AM - 10:00 AM

[7a-S22-4] A proposal of defect density extraction method for GaN epi-wafers

〇Hiroaki Kataoka¹, Takuya Hoshii¹, Iriya Muneta¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima¹, Taiki Yamamoto³ (1.Tokyo Tech, 2.Tokyo Tech IIR, 3.Sumitomo Chem)

10:00 AM - 10:15 AM

△ [7a-S22-5] Characterization of hole traps in n-type GaN homoepitaxial layers by optical isothermal capacitance transient spectroscopy considering thermal distribution of electrons at the edge of the depletion layer

〇Kazutaka Kanegae¹, Masahiro Horita¹, Tsunenobu Kimoto¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ)

10:30 AM - 10:45 AM

[7a-S22-6] Annealing behavior of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita¹, Tetsuo Narita^2,3, Tetsu Kachi³, Tsutomu Uesugi², Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

10:45 AM - 11:00 AM

[7a-S22-7] Electron traps in MOCVD p-GaN on GaN substrate

〇(M1)Tatsuya Kogiso¹, Yutaka Tokuda¹, Tetsuo Narita^2,3, Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

11:00 AM - 11:15 AM

[7a-S22-8] Change in electrical properties of Mg-ion implanted GaN by annealing

〇Naoshige Yokota¹, Kei Uetake¹, Masamichi Akazawa¹ (1.RCIQE-Hokkaido-Univ.)

11:15 AM - 11:30 AM

[7a-S22-9] CL properties of Mg-ion implanted GaN depending on thermal activation process

〇Hideki Sakurai^1,3, Shinji Yamada^1,3, Masato Omori¹, Yukihiro Furukawa³, Hideo Suzuki³, Jun Suda^1,2, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET)

11:30 AM - 11:45 AM

[7a-S22-10] Time-resolved photoluminescence characterization of Mg-doped GaN on GaN

〇Shigefusa Chichibu^1,2, Kazunobu Kojima¹, Kohei Shima¹, Shin-ya Takashima³, Masaharu Edo³, Katsunori Ueno³, Shoji Ishibashi⁴, Akira Uedono⁵ (1.IMRAM, Tohoku Univ., 2.IMaSS, Nagoya Univ., 3.Fuji Electric, 4.AIST, 5.Univ. of Tsukuba)

11:45 AM - 12:00 PM

▲ [7a-S22-11] Study of Wet Chemical Treatments of Epitaxial GaN(0001) Surface

〇Lingshan Peng¹, Akio Ohta¹, Truyen Nguyen Xuan^1,2, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Noriyuki Taoka², Tesuo Narita^3,4, Kenji Itoh³, Daigo Kikuta³, Koji Shiozaki⁴, Tetsu Kachi⁴, Seiichi Miyazaki¹ (1.Grad. School of Eng., Nagoya Univ., 2.AIST GaN-OIL, 3.Toyota Central R&D Labs., 4.IMaSS, Nagoya Univ.)

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