[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

[7a-S22-3] Fabrication of 4-6inch GaN free-standing substrates by VAS-method

〇Takayuki Suzuki¹, Toshio Kitamura¹, Taichiro Konno¹, Toshihisa Inoue¹, Satoshi Uematsu¹, Tetsuji Fujimoto¹, Takeshi Kimura¹, Yukio Abe¹, Hajime Fujikura¹, Takehiro Yoshida¹, Shinjiro Fujio¹ (1.SCIOCS)

Keywords:Nitride