The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

Thu. Sep 7, 2017 9:00 AM - 12:00 PM S22 (Palace B)

Taketomo Sato(Hokkaido Univ.)

9:30 AM - 9:45 AM

[7a-S22-3] Fabrication of 4-6inch GaN free-standing substrates by VAS-method

Takayuki Suzuki1, Toshio Kitamura1, Taichiro Konno1, Toshihisa Inoue1, Satoshi Uematsu1, Tetsuji Fujimoto1, Takeshi Kimura1, Yukio Abe1, Hajime Fujikura1, Takehiro Yoshida1, Shinjiro Fujio1 (1.SCIOCS)

Keywords:Nitride