[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

[7a-S22-7] Electron traps in MOCVD p-GaN on GaN substrate

〇(M1)Tatsuya Kogiso¹, Yutaka Tokuda¹, Tetsuo Narita^2,3, Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

Keywords:p-GaN, DLTS

We have studied traps in p-GaN using the p⁺⁺p^-n⁺ junction grown by MOCVD on n⁺-GaN substrate with capacitance DLTS measurements. Hole traps labeled Hc (0.46eV), Hd (0.88eV), He (1.00eV), Hf (1.30eV) and electron trap E3’ (0.57eV) are observed in the measurement temperature range from 200K to 550K. The energy level of E3’ coincides with that of E3 (0.57eV) observed in MOCVD n-GaN, suggesting the presence of the same electron trap in n- and p-GaN.