[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

[7a-S22-6] Annealing behavior of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita¹, Tetsuo Narita^2,3, Tetsu Kachi³, Tsutomu Uesugi², Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

Keywords:gallium nitride, deep level

We have investigated deep level traps in n-type GaN homoepitaxially grown by MOVPE where point defects are intentionally introduced. In this study, 400-keV electron-beam (EB) irradiation to n-GaN was performed to produce only N atom displacement and annealing behavior of EE2 peak, which is observed in EB-irradiated GaN samples, was investigated. The peak intensity of EE2 was increased by 550K annealing compared with the as-irradiated samples. On the other hand, 600K and 650K annealing decreased the peak intensity of EE2. This annealing behavior is similar to 5.4-MeV He⁺-irradiated GaN samples, which were previously reported, indicating that the origin of these peaks is the same and related to N atom displacement.