[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

[7a-S22-9] CL properties of Mg-ion implanted GaN depending on thermal activation process

〇Hideki Sakurai^1,3, Shinji Yamada^1,3, Masato Omori¹, Yukihiro Furukawa³, Hideo Suzuki³, Jun Suda^1,2, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET)

Keywords:semiconductor, GaN, Ion implantation