[7p-A202-1~15] 6.3 Oxide electronics

[7p-A202-4] Probing All-In-All-Out Antiferromagnetic Domains of Tb₂Ir₂O₇ Thin Films Utilizing Magnetoresistance

Takahiro Fujita¹, 〇Yusuke Kozuka¹, Jobu Matsuno², Masaki Uchida¹, Atsushi Tsukazaki³, Taka-hisa Arima^2,4, Masashi Kawasaki^1,2 (1.Dept. Appl. Phys., Univ. Tokyo, 2.RIKEN-CEMS, 3.IMR, Tohoku Univ., 4.Dept. Adv. Mater. Sci., Univ. Tokyo)

Keywords:iridium, spin-orbit interaction, topological

Pyrochlore iridates, which have been studied as a new electronic material utilizing their topological electronic structure, exhibit antiferromagnetic ordering called all-in-all-out. In this study, we investigate effective magnetic field acting on Ir spins of a Tb₂Ir₂O₇ thin film utilizing linear component of magnetoresistance, which reflect the type of magnetic domains. As a result, we reveal that opposite effective magnetic field acts on Ir between two circumstances when magnetic field directly acts on Ir spins and when Ir-Tb exchange field acts as effective magnetic field.