2:30 PM - 2:45 PM
▲ [7p-A301-6] Investigation of high-temperature annealing process of sputtered AlN films
Keywords:Nitride semiconductors, Annealing
AlN substrate is desirable for various optoelectronic and electronic applications due to its excellent physical properties. Our group recently reported the realization of high-quality sputtered AlN films by high temperature “face-to-face” annealing. However, the mechanism of AlN quality improvement by annealing is still unclear. In order to figure this out, the microstructure of sputtered AlN films annealed under different condition was investigated by scanning transmission electron microscopy (STEM) observation in this work.