[7p-A301-1~20] 15.4 III-V族窒化物結晶

▲ [7p-A301-6] Investigation of high-temperature annealing process of sputtered AlN films

〇Shiyu Xiao¹、Yikang Liu²、Ryoya Suzuki²、Hideto Miyake^1,2、Kazumasa Hiramatsu²、Shunta Harada³、Toru Ujihara³ (1.Mie Univ. Grad. Scl. of RIS、2.Mie Univ. Grad. Scl . of Eng、3.Nagoya Univ.)

キーワード：Nitride semiconductors, Annealing

AlN substrate is desirable for various optoelectronic and electronic applications due to its excellent physical properties. Our group recently reported the realization of high-quality sputtered AlN films by high temperature “face-to-face” annealing. However, the mechanism of AlN quality improvement by annealing is still unclear. In order to figure this out, the microstructure of sputtered AlN films annealed under different condition was investigated by scanning transmission electron microscopy (STEM) observation in this work.