[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

△ [7p-A402-11] Investigation of ZnO Thin Film Deposition Method by Microwave Excited Atmospheric Pressure Plasma

〇Tsunehisa Ono¹, Ryosuke Yamada¹, Tetsuya Taima¹, Tatsuo Ishijima¹, Yasunori Tanaka¹, Yoshihiko Uesugi¹ (1.Kanazawa Univ)

Keywords:Plasma, Zinc oxide, Deposition

In the manufacture of electronic devices, there is a step of forming an organic film or an inorganic film, and a film forming method is required at low cost and at low temperature. We are developing a film deposition method of ZnO thin film combining microwave-excited atmospheric pressure plasma jet (MWAPPJ) and Sol-gel method. In this study, we investigated a method to deposit thin films by reacting MWAPPJ with ZnO precursor deposited on solid target material. As a result, it was confirmed that the shape of the deposit varies depending on the number of laminated fixed target materials.