[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

△ [7p-A402-12] Time evolution of radical deposition rate in the downstream region of high-pressure multi-hollow discharge plasma CVD

〇Takashi Kojima¹, Susumu Toko¹, Kazuma Tanaka¹, Hyunwoohg Seo¹, Naho Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

Keywords:hydrogenated amorphous silicon, solar cell, plasma CVD