Oral presentation

[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

Thu. Sep 7, 2017 3:00 PM - 7:30 PM A402 (402+403)

Yasushi Inoue(Chiba Inst. of Tech.), Yasunori Ohtsu(Saga Univ.)

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3:00 PM - 3:15 PM

[7p-A402-7] Preparation of TiCN films by reactive HPPS with two facing targets

Toshihiko Mishima¹, Ryo Yoshida¹, 〇Setsuo Nakao², Kingo Azuma³, Takashi Kimura¹ (1.NIT, 2.AIST, 3.UH)

3:15 PM - 3:30 PM

[7p-A402-8] Room Temperature Synthesis of Gallium Nitride by Nitrogen Neutral Beam

〇Takeru Okada¹, Takane Imaoka^2,3,4, Kimihisa Yamamoto^2,3,4, Seiji Samukawa^1,3,5 (1.IFS, Tohoku Univ., 2.Tokyo Tech., 3.JST-CREST, 4.ERATO, 5.AIMR-Tohoku Univ.)

3:30 PM - 3:45 PM

[7p-A402-9] Plasma-enhanced CVD growth of GaN films

〇Atsushi Tanide^1,3, Motohiro Kohno^1,3, Shigeru Takatsuji¹, Akira Horikoshi^1,3, Shohei Nakamura¹, Kazuo Kinose¹, Soichi Nadahara¹, Masazumi Nishikawa², Akinori Ebe², Kenji Ishikawa³, Masaru Hori³ (1.SCREEN Holdings, 2.EMD Corp., 3.Nagoya Univ.)

3:45 PM - 4:00 PM

[7p-A402-10] Formation of High-Mobility IGZO Thin Film Transistors with Plasma Enhanced Reactive Sputter Deposition (II)

Yuichi Setsuhara¹, Masashi Endo¹, 〇Kosuke Takenaka¹, Giichiro Uchida¹, Akinori Ebe² (1.Osaka Univ., 2.EMD Corp.)

4:00 PM - 4:15 PM

△ [7p-A402-11] Investigation of ZnO Thin Film Deposition Method by Microwave Excited Atmospheric Pressure Plasma

〇Tsunehisa Ono¹, Ryosuke Yamada¹, Tetsuya Taima¹, Tatsuo Ishijima¹, Yasunori Tanaka¹, Yoshihiko Uesugi¹ (1.Kanazawa Univ)

4:15 PM - 4:30 PM

△ [7p-A402-12] Time evolution of radical deposition rate in the downstream region of high-pressure multi-hollow discharge plasma CVD

〇Takashi Kojima¹, Susumu Toko¹, Kazuma Tanaka¹, Hyunwoohg Seo¹, Naho Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

4:30 PM - 4:45 PM

△ [7p-A402-13] In-situ monitoring of SiO_x film deposition rate in reactive sputtering

〇Soya Todo¹, Yoshiyuki Shimosako¹, Tamayo Hiroki¹ (1.Canon Inc.)

4:45 PM - 5:00 PM

△ [7p-A402-14] Development of Silicon Oxide Gate Dielectric layers Deposition Process
Using Atmospheric Pressure Plasma Enhanced CVD

〇Yuichiro Kimoto¹, Koji Terawaki¹, Hiroshi Yamasaki¹, Takeshi Maekawa¹, Hiromasa Ohmi¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (1.Osaka Univ.)

5:15 PM - 5:30 PM

△ [7p-A402-15] Enhancement on adhesion of poly(carbonate) surfaces after plasma treatments

〇(M2)Mika Takahashi¹, Naoyuki Kurake¹, Kenji Ishikawa¹, Shingo Kondo², Takashi Aoki², Takayoshi Tsutsumi¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ. Eng., 2.DENSO CORPORATION)

5:30 PM - 5:45 PM

△ [7p-A402-16] High-density convergent plasma sputtering device for liquid metal target

〇Taisei Motomura¹, Tatsuo Tabaru¹ (1.AIST)

5:45 PM - 6:00 PM

△ [7p-A402-17] Dependence of Substrate Bias on DLC Film Prepared by Pulse Arc Jet

〇(M2)Itaru Fujita¹, Yuki Kondo¹, Tsuyoshi Tanimoto¹, Toru Harigai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Hidenobu Gonda², Yasuhiro Hadano³, Masao Kamiya⁴ (1.Toyohashi Univ. Technol., 2.OSG.Corp., 3.Kojima Ind. Corp., 4.Itoh Opt. Ind. Co., Ltd.)

6:00 PM - 6:15 PM

△ [7p-A402-18] The effect of time modulation of RF bias power on bonding structure of amorphous carbon films grown by radical injection plasma enhanced chemical vapor deposition

〇Hirotsugu Sugiura¹, Hiroki Kondo¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Keigo Takeda², Makoto Sekine¹, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Meijo Univ., 3.Nagoya Univ. Inst. of Innovation for Future Society)

6:15 PM - 6:30 PM

[7p-A402-19] Study on the low temperature synthesis of graphene using a blowing-type plasma

〇Jaeho Kim¹, Hajime Sakakita¹, Hirotomo Itagaki¹ (1.AIST)

6:30 PM - 6:45 PM

[7p-A402-20] Diamond growth by using a high density radical source with nonthermal plasma

〇Jaeho Kim¹, Hideaki Yamada¹, Hajime Sakakita¹ (1.AIST)

6:45 PM - 7:00 PM

[7p-A402-21] Development of diamond synthesis process by microwave hydrogen plasma enhanced chemical transport

〇(M1)Atsuhisa Togo¹, Satoshi Yamazaki¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

7:00 PM - 7:15 PM

[7p-A402-22] Target state control and preparation of nickel oxide thin film by water vapor sputtering

〇(M1)Yuki Yokoiwa¹, Yoshio Abe¹, Midori Kawamura¹, Kyung Ho Kim¹, Takayuki Kiba¹ (1.Kitami Inst.)

7:15 PM - 7:30 PM

[7p-A402-23] Development of supersonic pulsed plasma jet source and flow velocity measurement
by Schlieren method

〇Daisuke Ogasawara¹, Hiroaki Kawano¹, Hidekazu Miyahara¹, Chiaki Sato², Akitoshi Okino¹ (1.Tokyo Tech FIRST, 2.Tokyo Tech MSL)

Poster presentation

[8a-PB4-1~20] 8.3 Plasma deposition of thin film and surface treatment

Fri. Sep 8, 2017 9:30 AM - 11:30 AM PB4 (P)

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9:30 AM - 11:30 AM

[8a-PB4-1] Preparing of multi-elements thin films using powder target for fuel cells

〇Hiroharu Kawasaki¹, Hikaru Yoshino¹, Tamiko Ohshima¹, Yoshihito Yagyu¹, Takeshi Ihara¹, Masanori Shinohara¹, Yoshihiro Nojiri¹ (1.Nat. inst. Tech. Sasebo)

9:30 AM - 11:30 AM

△ [8a-PB4-2] Effects of substrate temperature on Si-H₂ bonds formation at P/I interface

〇Kazuma Tanaka¹, Hisayuki Hara¹, Takashi Kojima¹, Shota Nagaishi¹, Susumu Toko¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Naho Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

9:30 AM - 11:30 AM

[8a-PB4-3] Preparation of AZO thin film on Polycarbonate by RF sputtering and its application

〇Kosei Sugawara¹, Yasunori Ohtsu¹ (1.Saga Univ.)

9:30 AM - 11:30 AM

△ [8a-PB4-4] Effects of gas pressure on crystal quality of ZION films fabricated by RF magnetron sputtering

〇Liu Shi¹, Nanoka Miyahara¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

9:30 AM - 11:30 AM

[8a-PB4-5] Behavior of species in HiPIMS using carbon target

〇(M1)Kazunori Iga¹, Takayuki Ohta¹, Akinori Oda², Hiroyuki Kousaka³ (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Gifu Univ.)

9:30 AM - 11:30 AM

△ [8a-PB4-6] Fabrication of InN-rich (ZnO)_x(InN)_1-x films on sapphire substrate by sputter epitaxy

〇Nanoka Miyahara¹, Kazuya Iwasaki¹, Shi Liu¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

9:30 AM - 11:30 AM

△ [8a-PB4-7] Laser Scattering Measurement in Deposition Process of SiO:CH Particle by CCP-CVD

〇(B)Koji Horigome¹, Mamoru Yazaki¹, Takumi Aihara¹, Yasusi Inoue¹, Osamu Takai² (1.Chiba Inst., 2.Kantou gakuin Univ.)

9:30 AM - 11:30 AM

△ [8a-PB4-8] Spectroscopic in-situ Measurements during SiO:CH Deposition by ICP-CVD

〇(B)masato seitou¹, Toshiki Hirai¹, Takumi Aihara¹, Yasusi Inoue¹, Osamu Takai² (1.Chibakoudai Inst., 2.Kantou Gakuin Univ.)

9:30 AM - 11:30 AM

△ [8a-PB4-9] Effect of Substrate Bias on Amino Group Modification onto Fluorocarbon Polymer Surface by He/NH₃Gas Mixture Atmospheric Pressure Plasma Jets

〇Masahiro Kimpara¹, Masaaki Nagatsu^1,2,3 (1.Shizuoka Univ., 2.Shizuoka Univ., 3.Shizuoka Univ)

9:30 AM - 11:30 AM

△ [8a-PB4-10] Ageing Property of Amino-modified Surface of Graphite-encapsulated Magnetic Nanoparticles Fabricated by One-step DC Arc Discharge Method

〇Taiki Furukawa¹, Rui Hu², Masaaki Nagatsu^2,3 (1.Shizuoka Univ., 2.Shizuoka Univ.,, 3.Shizuoka Univ. ,)

9:30 AM - 11:30 AM

△ [8a-PB4-11] Effect of Hydroxyl Group Modification on Resin Adhesion of Aluminum Surface Irradiated by H2O Vapor Added He Gas Atmospheric Pressure Plasma

〇Hiroto Nito¹, Kunio Hayakawa¹, Masaaki Nagatsu^1,2 (1.Shizuoka Univ., 2.Shizuoka Univ)

9:30 AM - 11:30 AM

△ [8a-PB4-12] Highly-sensitive E. Coli Detection Property of Magnetic Nanoparticles Functionalized with Carboxyl Groups by Ar/H₂O RF Plasma

〇Takuya Omura¹, Anchu Viswan², Masaaki Nagatsu^1,2 (1.ShizuokaUniv., 2.Shizuoka Univ.)

9:30 AM - 11:30 AM

△ [8a-PB4-13] Fabrication of SiC films on Si(111) substrates via impurity mediated crystallization

〇Kouki Imoto¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

9:30 AM - 11:30 AM

[8a-PB4-14] Evaluation of isocyanate group on CNT formed by plasma treatment

〇Kazuki Michiya¹, Hideo Uchida¹, Daisuke Ogawa¹, Keiji Nakamura¹ (1.Chubu Univ.)

9:30 AM - 11:30 AM

[8a-PB4-15] Hydrodesulfurization Effect of Sulfur Oxide Using Microwave Excited Hydrogen Plasma

〇Akihisa Ogino¹, Masahiro Sugiyama¹ (1.Shizuoka Univ.)

9:30 AM - 11:30 AM

[8a-PB4-16] Formation of a-C:F by plasma irradiation on the PFC condensation layer and PTFE surface modification

〇Tetsuya Sato¹, Kouta Yamai¹, Kyouhei Morikawa¹, Haruka Soga¹, Chiaya Yamamoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

9:30 AM - 11:30 AM

[8a-PB4-17] DLC On-site Deposition by Atmospheric-Pressure Pen-like PlasmaⅢ

〇Hiroyuki Yoshiki¹, Kousuke Gando^1,2 (1.Tsuruoka NCT, 2.Canon Inc.)

9:30 AM - 11:30 AM

[8a-PB4-18] Low-temperature Formation of Crystallized Aluminum Nitride Thin Films with Plasma-Enhanced Pulsed DC Magnetron Sputtering

〇Kosuke Takenaka¹, Yoshikatsu Satake¹, Giichiro Uchida¹, Yuichi Setsuhara¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[8a-PB4-19] Deposition of Ga doped ZnO films using narrow-gap RF magnetron sputtering

〇Yoshinobu Matsuda¹, Kohei Sakamoto¹, Naoki Matsuo¹, Tomohiro Furusato¹, Takahiko Yamashita¹ (1.Nagasaki Univ.)

9:30 AM - 11:30 AM

[8a-PB4-20] Bonding Strength of PTFE Treated by Plasma-Graft Polymerization

〇Tomoyuki Kuroki¹, Yudai Togashi¹, Keita Hori¹, Kohei Suzuki¹, Masaaki Okubo¹ (1.Osaka Pref. Univ.)

Sessions

8 Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

△ [7p-A402-11] Investigation of ZnO Thin Film Deposition Method by Microwave Excited Atmospheric Pressure Plasma

△ [7p-A402-12] Time evolution of radical deposition rate in the downstream region of high-pressure multi-hollow discharge plasma CVD

△ [7p-A402-13] In-situ monitoring of SiOx film deposition rate in reactive sputtering

△ [7p-A402-14] Development of Silicon Oxide Gate Dielectric layers Deposition ProcessUsing Atmospheric Pressure Plasma Enhanced CVD

△ [7p-A402-15] Enhancement on adhesion of poly(carbonate) surfaces after plasma treatments

△ [7p-A402-16] High-density convergent plasma sputtering device for liquid metal target

△ [7p-A402-17] Dependence of Substrate Bias on DLC Film Prepared by Pulse Arc Jet

△ [7p-A402-18] The effect of time modulation of RF bias power on bonding structure of amorphous carbon films grown by radical injection plasma enhanced chemical vapor deposition

[8a-PB4-1~20] 8.3 Plasma deposition of thin film and surface treatment

△ [8a-PB4-2] Effects of substrate temperature on Si-H2 bonds formation at P/I interface

△ [8a-PB4-4] Effects of gas pressure on crystal quality of ZION films fabricated by RF magnetron sputtering

△ [8a-PB4-6] Fabrication of InN-rich (ZnO)x(InN)1-x films on sapphire substrate by sputter epitaxy

△ [8a-PB4-7] Laser Scattering Measurement in Deposition Process of SiO:CH Particle by CCP-CVD

△ [8a-PB4-8] Spectroscopic in-situ Measurements during SiO:CH Deposition by ICP-CVD

△ [8a-PB4-9] Effect of Substrate Bias on Amino Group Modification onto Fluorocarbon Polymer Surface by He/NH3 Gas Mixture Atmospheric Pressure Plasma Jets

△ [8a-PB4-10] Ageing Property of Amino-modified Surface of Graphite-encapsulated Magnetic Nanoparticles Fabricated by One-step DC Arc Discharge Method

△ [8a-PB4-11] Effect of Hydroxyl Group Modification on Resin Adhesion of Aluminum Surface Irradiated by H2O Vapor Added He Gas Atmospheric Pressure Plasma

△ [8a-PB4-12] Highly-sensitive E. Coli Detection Property of Magnetic Nanoparticles Functionalized with Carboxyl Groups by Ar/H2O RF Plasma

△ [8a-PB4-13] Fabrication of SiC films on Si(111) substrates via impurity mediated crystallization

Authentication

△ [7p-A402-13] In-situ monitoring of SiO_x film deposition rate in reactive sputtering

△ [7p-A402-14] Development of Silicon Oxide Gate Dielectric layers Deposition Process
Using Atmospheric Pressure Plasma Enhanced CVD

△ [8a-PB4-2] Effects of substrate temperature on Si-H₂ bonds formation at P/I interface

△ [8a-PB4-6] Fabrication of InN-rich (ZnO)_x(InN)_1-x films on sapphire substrate by sputter epitaxy

△ [8a-PB4-9] Effect of Substrate Bias on Amino Group Modification onto Fluorocarbon Polymer Surface by He/NH₃Gas Mixture Atmospheric Pressure Plasma Jets

△ [8a-PB4-12] Highly-sensitive E. Coli Detection Property of Magnetic Nanoparticles Functionalized with Carboxyl Groups by Ar/H₂O RF Plasma