The 78th JSAP Autumn Meeting, 2017

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8 Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

Thu. Sep 7, 2017 3:00 PM - 7:30 PM A402 (402+403)

Yasushi Inoue(Chiba Inst. of Tech.), Yasunori Ohtsu(Saga Univ.)

3:15 PM - 3:30 PM

[7p-A402-8] Room Temperature Synthesis of Gallium Nitride by Nitrogen Neutral Beam

〇Takeru Okada1, Takane Imaoka2,3,4, Kimihisa Yamamoto2,3,4, Seiji Samukawa1,3,5 (1.IFS, Tohoku Univ., 2.Tokyo Tech., 3.JST-CREST, 4.ERATO, 5.AIMR-Tohoku Univ.)

Keywords:GaN, Neutral Beam