The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

8 Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

Thu. Sep 7, 2017 3:00 PM - 7:30 PM A402 (402+403)

Yasushi Inoue(Chiba Inst. of Tech.), Yasunori Ohtsu(Saga Univ.)

7:00 PM - 7:15 PM

[7p-A402-22] Target state control and preparation of nickel oxide thin film by water vapor sputtering

〇(M1)Yuki Yokoiwa1, Yoshio Abe1, Midori Kawamura1, Kyung Ho Kim1, Takayuki Kiba1 (1.Kitami Inst.)

Keywords:oxide nickel thin film, sputtering, electrochromic

In the reactive sputtering method, a metal target is sputtered in a reactive gas to form a compound thin film. In this method, when the metal target is exposed to the plasma of the reaction gas, compound layer is often formed on the target surface. In this study, a nickel oxide thin film was prepared by using water vapor as reactive gas, and the target state was studied.