The 78th JSAP Autumn Meeting, 2017

Presentation information

Poster presentation

8 Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[8a-PB4-1~20] 8.3 Plasma deposition of thin film and surface treatment

Fri. Sep 8, 2017 9:30 AM - 11:30 AM PB4 (P)

9:30 AM - 11:30 AM

[8a-PB4-17] DLC On-site Deposition by Atmospheric-Pressure Pen-like PlasmaⅢ

Hiroyuki Yoshiki1, Kousuke Gando1,2 (1.Tsuruoka NCT, 2.Canon Inc.)

Keywords:atmospheric-pressure microplasma, CVD, Diamond-like carbon films

A pen-like plasma source (Plasma pen) has been proposed to achieve the on-site DLC coating. Plasma is generated by RF(13.56 MHz) excitation of a metal thin pipe electrode with surrounding by a quartz tube of Φ1.0 mm in an inner diameter. DLC films are synthesized on a Si substrate by plasma CVD using a gas mixture of CH4 as precursor, H2 and He as carrier gas. The dependence of CH4/H2/He ratio, RF electrode-work distance d, RF power and substrate temperature Tsub. on the DLC film characteristics is examined using the combinatorial synthesis/analysis method. Raman spectroscopic analysis showed two broad peaks of the G-band at 1520 cm-1 and the D-band at 1350 cm-1. The hardness HIT of more than 17 GPa was obtained at a condition of d=1mm, H2 concentartion of 27% and Tsub. 200℃.