[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

△ [7p-A402-13] In-situ monitoring of SiO_x film deposition rate in reactive sputtering

〇Soya Todo¹, Yoshiyuki Shimosako¹, Tamayo Hiroki¹ (1.Canon Inc.)

Keywords:sputtering, optical thin film

Transition mode deposition is widely used for high-rate compound deposition in reactive sputtering. To improve accuracy of thicknesses of deposited films, in-situ film deposition rate monitoring is important. We experimentally study monitoring methods using plasma emission spectroscopy (PEM) and plasma absorption spectroscopy. We also discuss the relation between the deposition rate and a sputtered particle density in the plasma.