[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

[7p-A402-9] Plasma-enhanced CVD growth of GaN films

〇Atsushi Tanide^1,3, Motohiro Kohno^1,3, Shigeru Takatsuji¹, Akira Horikoshi^1,3, Shohei Nakamura¹, Kazuo Kinose¹, Soichi Nadahara¹, Masazumi Nishikawa², Akinori Ebe², Kenji Ishikawa³, Masaru Hori³ (1.SCREEN Holdings, 2.EMD Corp., 3.Nagoya Univ.)

Keywords:GaN, CVD

Plasma-enhanced CVD growth of GaN films using chlorine gas is being studied to surpress a cost of manufacturing. In this talk, GaN deposition results will be introduced and the phenomena in the reaction on the substrate will also be discussed.