[7p-C11-1~21] 17.3 Layered materials

[7p-C11-16] Temperature dependent current characteristics of HfS₂/MoS₂ heterojunction

〇Seiko Netsu¹, Toru Kanazawa¹, Tomohiro Amemiya¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech)

Keywords:TMD, MoS2, HfS2

Transition metal dichalcogenide (TMD) is a layered material group having a band gap and is expected to be applied to a field effect transistor (FET) in an extremely short channel region making use of the thickness of an atomic layer. So far, our research group has reported the operation of FET with HfS₂ / MoS₂ heterostructure. In this report, we report electrical characteristics and temperature characteristics of HfS<sub style="color:rgb(33, 33, 33); font-family:arial,sans-serif; white-space:pre-wrap">2 / MoS<sub style="color:rgb(33, 33, 33); font-family:arial,sans-serif; white-space:pre-wrap">2 FET with a capping layer.