[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [7p-C17-4] Comparison of β-Ga₂O₃ Homoepitaxial Growth by Halide Vapor Phase EpitaxyUsing Different Oxygen Sources

〇Keita Konishi¹, Ken Goto^2,1, Rie Togashi^1,3, Hisashi Murakami^1,3, Masataka Higashiwaki⁴, Akito Kuramata², Shigenobu Yamakoshi², Bo Monemar^3,5, Yoshinao Kumagai^1,3 (1.TUAT, 2.Tamura Corporation, 3.TUAT GIR, 4.NICT, 5.Linkoping Univ.)

Keywords:HVPE, Gallium oxide, Thermodynamic analysis

本研究は、ハライド気相成長法を用いた酸化ガリウム(Ga₂O₃)成長時の酸素源としてO₂とH₂Oを用いた場合の熱力学解析と成長膜の比較・評価を行った。