The 78th JSAP Autumn Meeting, 2017

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Symposium (Oral)

Symposium » Film Formation and Low Temperature of IV Element Semiconductor

[7p-C18-1~11] Film Formation and Low Temperature of IV Element Semiconductor

Thu. Sep 7, 2017 1:30 PM - 6:30 PM C18 (C18)

Takashi Noguchi(Univ. of the Ryukyus), Naoto Matsuo(Univ. of Hyogo), Seiichiro Higashi(Hiroshima Univ.)

2:45 PM - 3:15 PM

[7p-C18-4] Position-controlled solid-phase-crystallization to produce high performance poly-Si TFT

〇Tanemasa Asano1 (1.Kyushu Univ.)

Keywords:TFT, polycrystalline silicon, metal nanoimprint

The metal nanoimprint technology to produce large crystal grains in a polycrystalline Si film at desired position on the substrate is reviewed. The crystallization proceeds in solid phase. The technology enables us to fabricate quasi-single crystalline TFTs. Impact of the quasi-single crystalline TFT on circuit performance is demonstrated.