[7p-PB6-1~10] 15.7 Crystal evaluation, impurities and crystal defects

△ [7p-PB6-8] Evaluation of SiC-MOSFET by multifunctional scanning probe microscope

〇(M1C)Yuuki Uchida¹, Mizuki Nakajima¹, Hidekazu Yamamoto¹, Nobuo Satoh¹ (1.CIT)

Keywords:multifunctional scanning probe mictoscope, SiC, differential capacity image

We are evaluating SiC device with Multifunctional scanning probe microscope.
This time, We evaluated SiC-MOSFET.
As an evaluation method, an atomic force microscope AFM 5300 manufactured by Hitachi High-Technologies Corporation was used.
To the apparatus, the oscillator and the measuring circuit are connected externally so that the surface potential image and the differential capacity image of the same place can be measured at the same time.