Device performances of InAlN MIS-HEMTs fabricated on Si substrates

Tomohiro Yoshida; Yoshimi Yamashita; Isao Makabe; Issei Watanabe; Akifumi Kasamatsu; Ken Nakata; Kazutaka Inoue

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

4:00 PM - 4:15 PM

△ [7p-S22-10] Device performances of InAlN MIS-HEMTs fabricated on Si substrates

〇Tomohiro Yoshida¹, Yoshimi Yamashita², Isao Makabe¹, Issei Watanabe², Akifumi Kasamatsu², Ken Nakata¹, Kazutaka Inoue¹ (1.Sumitomo Electric Ind., 2.NICT)

Keywords:HEMT, InAlN, Millimeter-Wave

We fabricated InAlN MIS-HEMTs on Si substrates, and measured the device performance. The current gain cut-off frequency (f_T) and maximum frequency of oscillation (f_max) of the device are 160 and 210 GHz. In addition, large gate leakage currents, a problem of InAlN HEMTs, is minimized with MIS gate structures. The device performances are well worth using millimeter-wave applications.