The 78th JSAP Autumn Meeting, 2017

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

4:15 PM - 4:30 PM

△ [7p-S22-11] Design of normally off PSJ with source electrode as Schottky junction

〇(M1)Masaya Ogura1, Ando Yuto1, Usami Shigeyoshi1, Tanaka Atsushi2,3, Deki Manato2, Honda Yoshio2, Yagi Shuichi6, Kawai Hiroji6, Amano Hiroshi2,4,5 (1.Nagoya Univ, 2.IMass, 3.NIMS, 4.Akasaki center, 5.VBL, 6.POWDEC K.K.)

Keywords:GaN, PSJ