[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

[7p-S22-5] Effects of bias annealing in normally-off GaN MIS-HFET

〇Takuma Nanjo¹, Tetsuro Hayashida¹, Koyama Hidetoshi², Imai Akifumi¹, Furukawa Akihiko³, Watahiki Tatsuro¹, Yamamuka Mikio¹ (1.Mitsubishi Electric Corp. Advanced Technology R&D Center, 2.Mitsubishi Electric Corp. High Frequency & Optical Device Works, 3.Mitsubishi Electric Corp. Power Device Works)

Keywords:Nitride semiconductor, Power device, bias anneal

Effects of bias annealing process were investigated in simple planar type normally-off GaN MIS-HFET without using etching process. The on-resistance decreased by half and obtained drain current density was over 0.7 A/mm.