[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

[7p-S22-6] Normally-off MOSFET properties fabricated on Mg implanted GaN layers

〇Shinya Takashima¹, Katsunori Ueno¹, Ryo Tanaka¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

Keywords:GaN, MOSFET, implantation

We report the characteristics of the lateral MOSFET fabricated on the [Mg] 1E18 cm^-3 implanted GaN layers. Normally-off MOSFET operation with V_th ~ 10V has been observed with SiO₂ gate insulator. The drain current increased with increasing activation annealing temperature, and the maximum field effect mobility of about 50 cm²/Vs has been obtained on the 1400°C annealed layer.