The 78th JSAP Autumn Meeting, 2017

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 8, 2017 9:00 AM - 11:45 AM A411 (411)

Takashi Hasunuma(Univ. of Tsukuba)

9:30 AM - 9:45 AM

△ [8a-A411-3] SiO2/Si Interface Trap Buildup Induced by Infrared Pulse Laser Irradiation

〇Keita Nomura1,2, Hiroaki Itsuji1,2, Daisuke Kobayashi1,2, Kazuyuki Hirose1,2 (1.Univ. Tokyo, 2.ISAS/JAXA)

Keywords:semiconductor, radiation, interface trap