The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 8, 2017 9:00 AM - 11:45 AM A411 (411)

Takashi Hasunuma(Univ. of Tsukuba)

10:45 AM - 11:00 AM

[8a-A411-7] Low temperature deformation of Ge single crystal by direct electric heating

Taiki Sakamoto1, Yasuhiko Shimotsuma1, Masaaki Sakakura2, Kiyotaka Miura1, Satoru Hachinohe3 (1.Kyoto Univ., 2.Next Generation Laser Processing Technology Research Association, 3.Proud Inc.)

Keywords:semiconductor, germanium

We have recently reported that deformation of Czochralski silicon crystal (CZ-Si) can be performed during extremely short time at 800 °C by using spark plasma sintering (SPS) method. Furthermore, we have also confirmed that the absorption peaking at 9 µm attributed to the interstitial oxygen was decreased. In this study, we treated the Ge single crystal which is a homologous semiconductor to Si, and compared Ge hot press with spark plasma sintering (SPS) method. As a result, SPS method succeeded in realizing short time, low temperature deformation and further high infrared transmittance. We observed microstructure measured by EBSD after treatment by Hot Press method and SPS method. In addition, we measured the optical characteristics after processing into a lens shape in order to apply to lenses of onboard cameras.