The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 8, 2017 9:00 AM - 11:45 AM A411 (411)

Takashi Hasunuma(Univ. of Tsukuba)

10:30 AM - 10:45 AM

[8a-A411-6] Measurement of surface potential as afunction SiO2 film thickness for investigation of self-compensation mechanism of X-ray induced charge-up on SiO2 surface

Takahiro Harie1,2, Kobayashi Daisuke2, Yamamoto Tomoyuki1, Hirose Kazuyuki1,2 (1.Waseda Univ., 2.ISAS/JAXA)

Keywords:charge-up, XPS, surface potential