[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [8a-A411-7] Low temperature deformation of Ge single crystal by direct electric heating

〇Taiki Sakamoto¹, Yasuhiko Shimotsuma¹, Masaaki Sakakura², Kiyotaka Miura¹, Satoru Hachinohe³ (1.Kyoto Univ., 2.Next Generation Laser Processing Technology Research Association, 3.Proud Inc.)

Keywords:semiconductor, germanium

We have recently reported that deformation of Czochralski silicon crystal (CZ-Si) can be performed during extremely short time at 800 °C by using spark plasma sintering (SPS) method. Furthermore, we have also confirmed that the absorption peaking at 9 µm attributed to the interstitial oxygen was decreased. In this study, we treated the Ge single crystal which is a homologous semiconductor to Si, and compared Ge hot press with spark plasma sintering (SPS) method. As a result, SPS method succeeded in realizing short time, low temperature deformation and further high infrared transmittance. We observed microstructure measured by EBSD after treatment by Hot Press method and SPS method. In addition, we measured the optical characteristics after processing into a lens shape in order to apply to lenses of onboard cameras.