[8a-C18-1~12] 13.5 Semiconductor devices and related technologies

[8a-C18-7] [JSAP Young Scientist Award Speech] High compressive strain GOI pMOSFET fabricated by Ge condensation process with reduced cooling rate

〇WuKang Kim¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

Keywords:Ge condensation, GOI pMOSFET, Compressive strain

With fundamental limits of scaling Si MOSFETs, Ge is expected to be one of the most promising next generation channel materials because of both high electron and hole mobility and easy introduction into the Si platform. Moreover, the UTB (Ultra-thin body) GOI (Ge-on-Insulator) structure is very important to suppress the short channel effect. Among the several GOI fabrication methods, the Ge condensation method is one of the most promising techniques to fabricate UTB GOIs. However, one of the most serious problems in Ge condensation has been the strain relaxation during the condensation process, which not only causes defects in GOI layers but also prevents mobility enhancement in pMOSFETS. Even though we have recently reported a new Ge condensation process which enabled to suppress strain relaxation during the process, the impact of the cooling time on remaining strain and the resulting pMOSFET mobility has not been examined yet. In this paper, we examine the effect of the cooling time in Ge condensation on strain and performance of fabricated GOI pMOSFET with compressive strain.