[8p-A203-1~4] III-V semiconductor growth technology for innovative devices

[8p-A203-1] Sublattice Reversal Epitaxy on High-Index Substrate and Its Application to Novel Surface-Emitting Terahertz Devices

〇Takahiro Kitada¹, Xiangmeng Lu¹, Yasuo Minami¹, Naoto Kumagai², Ken Morita³ (1.Tokushima Univ., 2.AIST, 3.Chiba Univ.)

Keywords:sublattice reversal epitaxy, nonlinear optical, terahertz device

Novel surface-emitting terahertz devices have been developed using GaAs/AlGaAs coupled multilayer cavity structure. Two-color lasing by current injection and its difference frequency generation are enabled in one device. Nonlinear polarization control is important for high efficiency. We demonstrate the devices fabricated using wafer-bonding technology and also show the polarization control by sublattice reversal epitaxy on a high-index substrate.