[8p-A203-1~4] III-V semiconductor growth technology for innovative devices

[8p-A203-2] Toward the development of THz biochips with GaAs

〇Masayoshi Tonouchi¹ (1.Osaka Univ.)

Keywords:THz biochip, GaAs

Compound semiconductors have been one of main players such as THz source/detector devices, objectives for fundamental science, and next generation functional devices. We have been studying many compound semiconductors; InGaAs for 1.5mm femtosecond laser operation, InAs epitaxial growth for strong THz source, local molecular adsorption/desorption energy evaluation system for atomic layer materials by using InP, GaN wafer evaluation by Laser THz emission, microscope so on. Here we propose and demonstrate to use GaAs and a sensitive THz microfluidic chips