[8p-A203-1~4] III-V semiconductor growth technology for innovative devices

[8p-A203-3] Eptitaxial growth on InP template on SiO2/Si substrate for fabricating membrane lasers/Si substrate for fabricating membrane lasers

〇Shinji Matsuo¹ (1.NTT)

Keywords:InP-based compound semicondustors

We will describe epitaxial growth on InP-based template on SiO2/Si substrate, which is an important technology to fabricate large-scale photonic integrated circuits (PICs) with low cost.