Strain effect on the ultra-thin AlN/GaN super-lattice growth

Xu-Qiang Shen; T Takahashi; T Ide; M Shimizu

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[8p-A301-1~12] 15.4 III-V-group nitride crystals

Fri. Sep 8, 2017 1:15 PM - 4:30 PM A301 (Main Hall)

Takayuki Nakano(Shizuoka Univ.), Tanikawa Tomoyuki(Tohoku Univ.)

2:30 PM - 2:45 PM

[8p-A301-6] Strain effect on the ultra-thin AlN/GaN super-lattice growth

〇Xu-Qiang Shen¹, T Takahashi¹, T Ide¹, M Shimizu¹ (1.AIST)

Keywords:superlattice, strain

III-Nitride semiconductors are potential materils for optical and electronic device applications. (Al,Ga)N/AlN quantum well (QW) and superlattice are widely used not only as an active layer in the device structure but also as a strain relaxation layer in a highly strained heterostructure system. In this presentation, we report the strain effect on the ultra-thin AlN/GaN superlattice growth.